AlGaN-based heterostructures have demonstrated versatility in RF electronics applications which is practically unmatched by other material systems. In particular, the AlGaN/GaN high electron mobility transistors (HEMTs) constitute a leading candidate for simultaneously realizing ultra-high frequency, low noise and high power amplifiers covering the range from 3-40 GHZ. The main advantage of AlGaN/GaN over Silicon and GaAs stems form its wide band gap, hence high breakdown fields and high electron saturation velocity. The electron transport properties at the AlGaN/GaN interface along with the high electron saturation velocity and high breakdown fields in AlGaN/GaN are the basis for the superior performance of these devices. Magnolia has designed a unique HEMT device structure that will improve the device performance and improve reliability of the HEMT devices. Magnolia proposes to use Semi-insulating SiC substrates to grow HEMT devices using RF plasma assisted MBE growth of AlGaN/GaN. As part of the proposed effort, Magnolia plans to incorporate microelectronic processes for dry-etching and electrical contact formation, for the fabrication of ultra high frequency, low noise and high power nitride HEMT devices with high reliability. Magnolia objective is to demonstrate HEMT devices capable of Peak Power-added Efficiency (PAE) of greater than 50 percent and high power density for operation at 10 GHZ and higher frequencies.